Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused Si Ion Beam Implantation

Submicron grating patterns (0.4 µm period) were fabricated in AlGaAs-GaAs superlattices (SL's) using compositional disordering of SL's by focused Si ion beam implantation and subsequent annealing. The grating structure which is composed of preserved SL and mixed (disordered) regions was confirmed by scanning electron microscopic (SEM) and scanning Auger microscopic (SAM) observations.