Transverse mode controlled AlGaAs–GaAs multiquantum well(MQW) lasers with buried MQW optical guide (MQWBOG) have been developed using compositional disordering induced by Si ion implantation and subsequent annealing. It is confirmed that the MQW-BOG lasers fabricated by these simple and completely planar processes operate in a fundamental transverse and single longitudinal mode.
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Ishida et al. (1986) studied this question.
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