GaAs n+ iδp+ in+ barrier transistor with ultra-thin p+AlGaAs base prepared by molecular beam epitaxy

A GaAs n+ iδp+in+ bulk barrier transistor with an ultra-thin p+Al0.2Ga0.8 As base was fabricated by molecular beam epitaxy. It is found that the barrier height can be modified by the ΔEc for the conduction band barrier and by the ΔEv for the valence band barrier, in addition to the planar doped bulk barrier. Both the base-emitter bias voltage and the incident light intensity can modulate the collector current.