Bulk-barrier diodes (BBDs) are majority carrier Si devices; their electrical characteristics can be adjusted by process design. Measurements of the quantum efficiency have been made in the wavelength range of 1.4–2.0 μm. The infra-red sensitivity of a BBD in this region is explained by the excitation of carriers from deep traps produced by ion implantation.
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N. Georgoulas (1987) studied this question.
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