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We demonstrate a modulated barrier photodiode (MBP) grown by molecular beam epitaxy on p-type gallium arsenide substrates. This device has an ultrahigh response speed with a rise time <30psec and a full width at half maximum <50psec. A DC optical gain of 90 has also been measured for an incident power in the nanowatt range.
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Chen et al. (1981) studied this question.
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