Residual shallow acceptors in GaAs layers grown by metal-organic vapor phase epitaxy

A study of the residual impurities present in GaAs layers grown by metal-organic vapor phase epitaxy has been conducted. Gallium arsenide layers were grown from three different trimethylgallium sources as a function of the substrate temperature and the arsine partial pressure which are the main factors controlling the concentration of residual impurities. A study of the low temperature photoluminescence spectra of the layers supported by preliminary secondary ion mass spectroscopy measurements shows that the major residual acceptors are carbon, magnesium, and zinc.