Electronic properties of the SiSiO2 interface as a function of oxide growth conditions. I. Surface states

A well pronounced minimum is observed in the surface states distribution of dry grown MOS samples. Some states are created during oxidation (V-states). These acceptor like states are located at energies higher than Ei—0.1 eV. They disappear after oxygen annealing at lower temperatures. Other states (O-states) appear during this last treatment. Their properties are less sharply defined. Their capture cross section is higher than for V-states. Vacuum annealing of the completed sample leads to some reconstruction of the interface.