Recoverable and nonrecoverable degradation modes have been found by forced degradation tests in In0.53Ga0.47As heterojunction photodetectors. In0.76Ga0.24As0.55P0.45cap layer and In0.53Ga0.47As light-absorption layer were grown by liquid-phase epitaxy (LPE) on a
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Tashiro et al. (1983) studied this question.
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