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September 1, 1970Japanese Journal of Applied Physics

A New Instability in MOS Transistor Caused by Hot Electron and Hole Injection from Drain Avalanche Plasma into Gate Oxide

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HHHisashi HaraSakai Municipal HospitalYOYoshihiko OkamotoShibaura Institute of TechnologyHOHiroie OhnumaShibaura Institute of Technology

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Hara et al. (1970) studied this question.

synapsesocial.com/papers/6a6f2faa5d37378ac1dc4302https://doi.org/10.1143/jjap.9.1103
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