Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1967IEEE Transactions on Electron Devices

Electron drift velocity in avalanching silicon diodes

View Full Paper
Ask AI
Bookmark
Share

Authors

CDC.Y. DuhStanford MedicineJMJ.L. MollVirginia Commonwealth University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Duh et al. (1967) studied this question.

synapsesocial.com/papers/6a7239992163a0a01bc5ffc2https://doi.org/10.1109/t-ed.1967.15895
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Measurement of the drift velocity of holes in silicon at high-field strengths1967 · 41 citations
  2. 2Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique1967 · 118 citations
  3. 3Mobility of Holes and Electrons in High Electric Fields1953 · 357 citations
  4. 4Avalanche transit time microwave oscillators and amplifiers1965 · 37 citations
  5. 5Hot Electrons in Germanium and Ohm's Law1951 · 557 citations