Small-signal high-frequency photo-e.m.f. of AlSiO2Si and AlSi3N4SiO2–Ge structures is measured using a 30 μm diameter light probe. The measurements are carried out during continuous scanning of the investigated surface with displaying of the results as “three-dimensional” plots by XY recorder. The surface potential and its fluctuations over the sample area are determined.
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Nakhmanson et al. (1978) studied this question.
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