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Conductance-versus-voltage measurements were employed to determine the distribution of fast interface states in MOS and MNS capacitors and the changes in these distributions due to gamma irradiation with applied bias. MNS samples showed no changes due to irradiation, while MOS samples showed an increase in the conductance peak due to an increase in the density of the fast states.
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C. W. Perkins (1968) studied this question.
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