What question did this study set out to answer?

Determine photoelectric threshold energies for electron emission from aluminum, gold, and silicon into pyrolytically deposited aluminum oxide films to construct an energy-band diagram.

November 1, 1971Journal of Applied Physics

Internal Photoemission Measurements in a Metal-Al2O3–Si System

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Authors

NSN. SzydloThales (Portugal)RPRaymond A. PoirierMemorial University of Newfoundland

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Implication

Experimental study reveals electron photoemission barrier energies in metal-Al2O3-Si structures, clarifying the energy-band alignment for solid-state devices.

Key Points

Determine photoelectric threshold energies for electron emission from aluminum, gold, and silicon into pyrolytically deposited aluminum oxide films to construct an energy-band diagram.
Deposited thin Al2O3 films onto Si substrates via chemical pyrolysis of AlCl3 at 850°C.
Conducted internal photoemission measurements at metal-insulator and semiconductor-insulator interfaces using Al, Au, and Si.
Measured electron photoemission thresholds of 3.05±0.1 eV for Al, 4.0±0.1 eV for Au, and 4.1±0.1 eV from the Si valence band into Al2O3.
Detected no measurable hole photocurrent across the pyrolytic Al2O3 layer.
Constructed an approximate energy-band diagram describing the complete Al–Al2O3–Si system.

Cite This Study

Szydlo et al. (1971) studied this question.

synapsesocial.com/papers/6a82a5cf68df11fa7b6d01f9 https://doi.org/10.1063/1.1659868

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Implication

Experimental study reveals electron photoemission barrier energies in metal-Al2O3-Si structures, clarifying the energy-band alignment for solid-state devices.

Internal Photoemission Measurements in a Metal-Al2O3–Si System

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Implication

Key Points

Cite This Study

Internal Photoemission Measurements in a Metal-Al2O3–Si System

Discussion

Member takes

Implication

Key Points

Cite This Study

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