The predicted quantitative relation between the density and trapping cross section of traps in Si3N4 and the Coulomb repulsion radius in the Wigner crystallization of carriers in localized states is observed experimentally. The absence of ESR for localized electrons and holes in Si3N4 is interpreted on the basis of a model of a resonance exchange interaction of electrons on account of tunneling via localized states.
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Gritsenko et al. (1996) studied this question.
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