Nature of the E′ deep hole trap in metal-oxide-semiconductor oxides

We have found through a sequence of ultraviolet illuminations, electron spin resonance measurements, and capacitance versus voltage measurements, that the E′ deep hole trap in metal-oxide-semiconductor silicon dioxide is a fundamentally reversible defect. Our results are totally consistent with an oxygen vacancy model for the E′ deep hole trap, but our results are inconsistent with the bond strain gradient model for the deep hole trap in metal-oxide-semiconductor silicon dioxide.