The mobility of electrons in ultrathin silicon-on-insulator (SOI) and germanium-on-insulator (GOI) is studied. Quantum simulations are carried out to calculate phonon-limited mobility based on the experimental data for bulk. Modulation of the electron population in different ladders is shown to have a constructive effect in (111) Ge, whereas in (100) Ge mobility drops monotonically with either increase of gate bias or by thinning the GOI film.
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Khakifirooz et al. (2004) studied this question.
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