Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors

This paper describes the mobility behavior in ultra thin body (UTB) silicon on insulator (SOI) p-type metal oxide semiconductor field effect transistors (pMOSFETs). We propose a method of detecting scattering mechanisms in UTB pMOSFETs, and experimentally demonstrate that the mobility in an 8.1-nm-thick SOI pMOSFET degrades due only to increased acoustic phonon scattering, while other degradation mechanisms appear in a 4.5-nm-thick device. It is also demonstrated that the mobility in the 4.5-nm-thick device shows universal characteristics as a function of an effective electric field for various substrate biases, which is the same behavior as that of bulk MOSFETs.