Diffusion of P in a novel three-dimensional device based on Si–TaSi2 eutectic

The diffusion of P in Si–TaSi2 eutectic and silicon single crystal specimens was investigated at a concentration of about 1019 atoms cm−3 in the temperature range of 767–1227 °C. No definite distinction can be made between diffusion of P in the eutectic structure and in silicon. A nonlinear Arrhenius plot was obtained, indicating a P diffusion enhancement at the lower temperature range. From the linear portion of the Arrhenius line drawn through all the experimental points, an activation energy and pre-exponential factor of 3.75 eV and 5.7 cm2 s−1 were derived, respectively.