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September 1, 1977Journal of the Physical Society of Japan

Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si II. Electric Break Through

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FOFusayoshi J. OhkawaHokkaido University of ScienceYUYasutada UemuraTokyo University of Science

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Ohkawa et al. (1977) studied this question.

synapsesocial.com/papers/6a82d1ade41271e79b8d62e3https://doi.org/10.1143/jpsj.43.917
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  1. 1Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass Theory1977 · 105 citations
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  3. 3Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit1967 · 1,936 citations
  4. 4Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent Bond1965 · 337 citations