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We report here on investigations of electrical and optical properties of single zigzag SnO2 nanobelts. Large scale zigzag nanobelts were obtained on a silicon substrate by a Chemical Vapor Deposition (CVD) approach. The average value of carrier concentrations (Nd) and electron mobility (μ) were calculated to be 1.39 × 1018 cm−3 and 70.76 cm2 V−1 s−1, respectively. Room temperature PL exhibits a broad emission peak centred at 600 nm. Three Raman active modes at 474.8, 633.8, 775.8 cm−1 were observed. Electron paramagnetic resonance measurements suggest the presence of many singly ionized states.
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Butt et al. (2013) studied this question.
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