The letter describes the characteristics of stripe lasers formed in GaAs/GaAlAs single-quantum-well graded-composition separate-confinement heterostructures (GRIN-SCH) grown by low-pressure organometallic vapour phase epitaxy (LP-OMVPE). We show that the low threshold current density that has been achieved with the GRIN-SCH structure allows low threshold currents (38 mA) to be achieved in a simple gain-guided stripe-geometry laser. These low thresholds have been obtained without resorting to a complex nonplanar (lower yield) technology, and it is shown that the good uniformity offered by OMVPE is maintained through to the mounted device stage.
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Krakowski et al. (1983) studied this question.
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