The effects of heat treatment on platinum silicide Schottky diodes with aluminum metal contacts have been investigated. It has been found that the aluminum reacts with the silicide causing a change in the effective metal-semiconductor barrier height over a range of approximately 0.25 eV. Schottky diodes with initial platinum silicide characteristics convert to devices with barrier heights characteristic of aluminum after extended heat treatments.
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H. H. Hosack (1972) studied this question.
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