Chemical trends in the activation energies of D X centers

The activation energies of DX centers in AlGaAs doped with six different impurities (S, Se, Te, Si, Ge, and Sn) are measured by deep level transient spectroscopy. Remarkable trends are established, in which the activation energies of DX centers with group IV impurities become shallower as the mass number of the impurity increases, while those with group VI impurities remain constant.