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The free-carrier plasma edge and plasma diffusion dynamics have been studied in Ge by monitoring rapid temporal variations of surface reflectivity at 10.6-μm wavelength which occur after excitation by intense picosecond pulses at 1.6 μm. The results of such transient spectroscopy show that the method can be used as a sensitive diagnostic tool for the many semiconductor plasmas.
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Jamison et al. (1976) studied this question.
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