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July 1, 1997Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

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Authors

NRN. R. RuegerMicron (United States)JBJJ BeulensAlbany State UniversityMSM. SchaepkensGeneral Electric (United States)

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Rueger et al. (1997) studied this question.

synapsesocial.com/papers/6a8317baef922d238058297dhttps://doi.org/10.1116/1.580655
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