Molecular beam epitaxy regrowth by use of ammonium sulfide chemical treatments

The application of ammonium sulfide chemical treatments for molecular beam epitaxy regrowth is examined. Reflection high-energy electron diffraction, transmission electron microscopy, and capacitance-voltage profiling techniques are used to investigate the regrown interface. A slight enhancement of the electron concentration is seen at the regrown interface due to the incorporation of residual sulfur atoms as donors. The amount of residual sulfur donors is a strong function of the substrate temperature at which regrowth is initiated.