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A top-illuminated GaInAs/InP pin photodiode has been produced in a planar-junction configuration, which combines high reliability (no change in dark current over 4700 h at 175°C) with the widest bandwidth (25 GHz), and highest quantum efficiency (80% at 1.55 μm), yet reported for this type of device.
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Wake et al. (1989) studied this question.
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