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We report the growth and fabrication of the first InP/ GaInAs heterojunction bipolar transistor by OMCVD. Fabricated transistors exhibited near-ideal emitter-base junction electrical characteristics over ten orders of magnitude, enabling us to obtain transistor current gains as high as 5000 at current densities as low as 1000 A cm−2. This is the highest current gain reported for this material system.
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Hayes et al. (1987) studied this question.
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