By inserting a thin n-InP layer between the p/sup +/-InGaAs base and the n-InP collector excellent transistor characteristics were obtained. The DE and small-signal current gains were 7000 and 11000, respectively, which are the highest values reported for transistors of this type. The transistors were also operated in a collector-up configuration with DE gains as large as 2500.>
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Sugiura et al. (1988) studied this question.
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