Thermal stability and band alignments for Ge3N4 dielectrics on Ge

Ge 3 N 4 dielectrics were prepared on Ge surface by in situ direct atomic source nitridation. The thermal stability and band alignments for Ge3N4∕Ge interfaces have been studied by using high-resolution x-ray photoemission spectroscopy. The in situ thermal treatment shows that Ge3N4 film has higher temperature thermal stability up to 550°C in vacuum. The conduction- and valence-band offsets at Ge3N4∕Ge interface are quite asymmetrical with the values of 2.22 and 1.11eV, respectively.