Answers are grounded in this paper and cite their sources.
A new type of infrared photodetector using free electron absorption in a heavily doped GaAs/GaAlAs quantum well structure has been demonstrated. Preliminary results indicate a strong response in the near infrared with a responsivity conservatively estimated at 200 A/W. The structure can potentially be tailored during fabrication for use in several infrared bands of interest, including the 3 to 5 micron band and the 8 to 10 micron band.
No takes yet. Share an insight, caveat, or question.
Smith et al. (1983) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: