A Long-Wavelength Infrared Photodetector with Self-Organized InAs Quantum Dots Embedded on HEMT-Like Structure

We fabricated a quantum dot infrared photodetector (QDIP) with 5-stacked self-organized InAs quantum dots embedded in a high electron mobility transistor-like modulation doped structure and utilize lateral electron transport. A peak response of the QDIP appeared at λ=10.5 µm at T =80 K. We also found that the device exhibits bias-dependent responsivity.