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April 20, 1998Applied Physics LettersOpen Access

Far-infrared photoconductivity in self-organized InAs quantum dots

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Authors

JPJamie PhillipsUniversity of DelawareKKK. KamathIntel (United States)PBP. BhattacharyaNational Institute of Pharmaceutical Education and Research

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Phillips et al. (1998) studied this question.

synapsesocial.com/papers/6a716d73febe604dd70a1881https://doi.org/10.1063/1.121252
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Relaxation of strained InGaAs during molecular beam epitaxy1990 · 123 citations
  2. 2Normal incident infrared absorption from InGaAs/GaAsquantum dot superlattice1996 · 66 citations
  3. 3First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well1985 · 983 citations
  4. 4Role of strain and growth conditions on the growth front profile of In<i>x</i>Ga1−<i>x</i>As on GaAs during the pseudomorphic growth regime1988 · 249 citations
  5. 5Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers1997 · 65 citations