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Changes in the electrical resistance of thin carbon films caused by implantation with hydrogen, deuterium, and carbon ions were measured for various incident energies and for particle fluences in the range from 1012 to 1017 at./cm2. At low fluences the resistivity change is found to be proportional to the displacement damage caused by the incident particles. A model is presented which can be used to calculate the resistance change which is in good agreement with the measurements. It is proposed that by measuring the resistance change for carbon films exposed to the edge of magnetically confined plasmas the energy and the flux of incident ions and neutral atoms may be determined.
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W.R. Wampler (1982) studied this question.
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