Investigation of trapping levels in heavy ion implanted cadmium telluride

Semi-insulating CdTe has been implanted with argon, indium, tellurium and bismuth ions at energies of 50 keV or 100 keV. Carrier trapping levels have been detected at approximately 0.1 eV, 0.3 eV, 0.4 eV and 0.55 eV, using the thermally stimulated current technique. Not all of these levels were produced by each ion for each dose used. After annealing at 300°C no levels were detected.