The photovoltaic characteristics of an a-Si:H Schottky barrier cell have been analyzed theoretically taking into account geminate recombination and the localized state distribution. A comparison of the results with the experimental data in the literature leads to fundamentally different conclusions regarding the limitations of this type of photovoltaic cell. The limitation due to carrier lifetime is unimportant in a cell of typical thickness (∼0.5 μm), while geminate recombination can essentially account for observed recombination losses.
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Chen et al. (1980) studied this question.
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