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November 15, 1985Applied Physics Letters

Pulsed high rate plasma etching with variable Si/SiO2 selectivity and variable Si etch profiles

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RBR. W. BoswellAustralian National UniversityDHDaniel HenryUniversité Claude Bernard Lyon 1

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Boswell et al. (1985) studied this question.

synapsesocial.com/papers/6a8351e3b95cf4e61630e3dbhttps://doi.org/10.1063/1.96340
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