Effects of Annealing on the Structural Properties of GaAs on Si(100) Grown at a Low Temperature by Migration-Enhanced Epitaxy

This paper reports the effects of annealing on the structural properties of GaAs on Si(100) grown at a low temperature by migration-enhanced epitaxy (MEE). Low-temperature MEE growth at 300°C followed by brief postgrowth annealing at 580°C produces better-quality crystals than conventional high-temperature growth. A 6 µm-thick sample produced using this method showed an X-ray diffraction FWHM of 123 arcsec with an etch-pit density of 4×10 5 cm -2 . This indicates that low-temperature MEE growth can significantly reduce the dislocation density in the GaAs epilayer compared to the conventional two-step growth technique.