Answers are grounded in this paper and cite their sources.
Highly oriented InAs films have been grown on natural diamond by MBE. InAs growths were carried out on diamond and on lattice-matched III–V substrates at 250, 300, and 470 °C. The highest quality films (smoothest surface and highest degree of crystallinity) were obtained at 300 °C. X-ray diffraction data indicate that the films have a strong [111] surface normal orientation. RHEED data indicate that the InAs forms a polyvariant thin film with alignment parallel to the interface of one of the 〈110〉InAs directions with one of the 〈110〉diamond directions.
No takes yet. Share an insight, caveat, or question.
Williams et al. (1992) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: