Modeling growth of Si1−xGex epitaxial films from disilane and germane

A Langmuir–Hinshelwood-type kinetic model is developed for modeling growth of silicon–germanium alloys from disilane and germane on Si substrates. Gas source molecular beam epitaxy was employed to grow Si1−xGex films at various germanium fractions, x, in the alloy and at different temperatures. The model correctly predicts experimentally observed and previously reported behavior; a monotonic decrease with germanium fraction at higher substrate temperatures (700 °C) and a maximum in the growth rate for lower temperatures (550 °C and 610 °C).