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May 23, 1988Applied Physics Letters

Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si

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Authors

DDD.G. DeppeUniversity of Central FloridaNHN. HolonyakGeneral Electric (United States)KHK. C. HsiehNational Sun Yat-sen University

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Deppe et al. (1988) studied this question.

synapsesocial.com/papers/6a8353a937400aad4b18f565https://doi.org/10.1063/1.99633
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