Mesh pattern of Ge islands grown using solid phase epitaxy

We present mesh patterns of Ge islands grown on a Si(111) surface using solid phase epitaxy. Typical experimental conditions for the formation of these mesh patterns are substrate temperatures of 300–500 °C and a Ge thickness of about 10 Å. The mesh pattern is due to preferential crystallization of a-Ge films at steps and at out-of-phase boundaries of 7×7 structures.