Possibility and limitation of sub-nanometer thickness measurements with spectroscopic ellipsometry (SE) of ultrathin silicon oxide on hydrogen-terminated silicon were investigated, in comparison with X-ray photoelectron spectroscopic (XPS) measurements of the same sample. Experimental results obtained from SE showed ultraslow growth of the oxide with the increase of time in air t (hours) at the rate of 0.7·log 10 t (nm) up to 100 hours. During the hydrogen termination prevented from the oxidation for 4 hours by XPS observation, the `oxide thickness' remained at 0.3 nm at the initial stage of the oxidation by SE measurements.
No takes yet. Share an insight, caveat, or question.
Gonda et al. (1998) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: