Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 1, 1988Journal of Applied Physics

The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching

View Full Paper
Ask AI
Bookmark
Share

Authors

TTTakayuki TakahagiHiroshima UniversityINIchiro NagaiTokyo University of Marine Science and TechnologyAIA. IshitaniToray Industries, Inc. (Japan)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Takahagi et al. (1988) studied this question.

synapsesocial.com/papers/6a83582ccd5bc3880318fbddhttps://doi.org/10.1063/1.341489
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1UV ozone cleaning of silicon substrates in silicon molecular beam epitaxy1984 · 86 citations
  2. 2An investigation on surface conditions for Si molecular beam epitaxial (MBE) growth1985 · 30 citations
  3. 3Acceptor dopants in silicon molecular-beam epitaxy1977 · 123 citations
  4. 4Electron spectroscopy study of silicon surfaces exposed to XeF2 and the chemisorption of SiF4 on silicon1980 · 172 citations
  5. 5Surface chemistry of HF passivated silicon: X-ray photoelectron and ion scattering spectroscopy results1986 · 142 citations