We have investigated green-emitting GaInN two-dimensional photonic crystals with air holes that penetrate through the active layer. At room temperature, the observed photoluminescence intensity from the photonic crystal is approximately three times that of a sample with no photonic crystal structure. This is due to the low surface recombination velocity (1.4 × 10 3 cm/s) of GaInN at the air hole edges and a higher degree of light extraction by the diffraction effect.
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KITAGAWA et al. (2008) studied this question.
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