Formation of Sb-Doped SnO[sub 2] p-Type Ohmic Contact for Near-UV GaN-Based LEDs by a CIO Interlayer

A Cu-doped (CIO) interlayer was introduced to enhance the electrical and optical properties of Sb-doped (ATO) p-type electrodes grown by pulsed laser deposition. CIO /ATO contacts become ohmic with specific contact resistance of and give transmittance of at , when annealed at 630°C for in air. Near-UV -based light-emitting diodes (LEDs) fabricated with the CIO/ATO p-electrodes give forward-bias voltage of at injection current of and show much higher output power compared to LEDs with conventional p-electrodes.