An ultralow specific on-resistance, vertical channel, power MOSFET structure, based on current conduction via an accumulation layer formed on the surface of a trench (UMOS) gate structure, is described. Two-dimensional numerical simulations and experimental results have been obtained, demonstrating that a specific on-resistance approaching 100 mu Omega -cm/sup 2/ can be obtained for a silicon device capable of blocking 25 V.>
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Baliga et al. (1992) studied this question.
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