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The built-in diode in the power MOSFET can be used as an integral flyback diode in a power electronics circuit. However, if the power MOSFET is not optimized for utilization of the built-in diode, it can catastrophically fail during the diode mode of operation. A failure mechanism is proposed and discussed. It is found that through improved design with optimized cell geometry, vertical device structure, and electron irradiation, a rugged power MOSFET can be made such that the built-in diode will operate successfully as a flyback diode without inducing failure to the power MOSFET device.>
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Yilmaz et al. (1990) studied this question.
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