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February 1, 1980IEEE Transactions on Electron Devices

Thermal stability and secondary breakdown in planar power MOSFET's

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IYIsao YoshidaInstytut Hematologii i TransfuzjologiTOT. OkabeHitachi (Japan)MKM. KatsuedaHitachi (Japan)

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Yoshida et al. (1980) studied this question.

synapsesocial.com/papers/6a6f2d4135aa2c282ce0957chttps://doi.org/10.1109/t-ed.1980.19873
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Avalanche breakdown in high-voltage D-MOS devices1976 · 59 citations
  2. 2A high power MOSFET with a vertical drain electrode and a meshed gate structure1976 · 21 citations