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August 1, 1976IEEE Journal of Solid-State Circuits

A high power MOSFET with a vertical drain electrode and a meshed gate structure

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Authors

IYIsao YoshidaInstytut Hematologii i TransfuzjologiMKM. KuboNagoya Institute of TechnologySOS. OchiHitachi Maxell (Japan)

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Yoshida et al. (1976) studied this question.

synapsesocial.com/papers/6a838544b20958766b9eef09https://doi.org/10.1109/jssc.1976.1050761
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